国家/地区 美国（3）
IPC部 C（3）
IPC大类 C23（3） C01（2） H01（2）
IPC小类 C23C（3） C01B（2）
IPC C23C016/44（3）
发明人
公开年 2017（3）
申请年 2016（2） 
专利权人

Apparatus for producing transition metal dichalcogenide (TMD) transistor arrays of electronic device, has single-layer transition metal dichalcogenide formed only on substrate and lateral edges of monolayer graphene film.

PARK J, GAO H, GUIMARAES M H D, RALPH D C, KANG K, XIE S

Preparing deposited graphene used as genosensor, comprises heating metal substrate and carbon source in sealed ambient environment, maintaining temperature and time sufficient to form graphene lattice and then cooling substrate.

SEO D H, PINEDA S, HAN Z J, OSTRIKOV K

Perforated sheet of graphene-based material having an area, comprises perforated single layer of graphene and many perforations in single layer of graphene located over the area of the single layer of graphene.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M