国家/地区 美国（3）
IPC部 B（3）
IPC大类 B82（3）
IPC小类 B82Y（3）
IPC B82Y040/00（3） C01B031/02（3） B82Y030/00（2）
C01B031/00（2） H01L021/02（2）
发明人
公开年 2009（2）
申请年 2009（3）
专利权人

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Modified graphene comprising sp3 orbital, useful in e.g. spintronics device, magneto-electronic device, wafer, ferromagnetic semiconductor, and field effect transistor, and as room temperature ferromagnetic semiconductor.

BEKYAROVA E, HADDON R C, HONG J, ITKIS M E, KHIZROEV S, RAMESH P

Manufacture of graphene for electrode, involves applying alternating current to electrodes arranged in and exterior of liquid containing organic compound, generating plasma in gas-liquid interface and decomposing organic compound.

HORI M, KANO H