国家/地区 世界知识产权组织（3）
IPC部 C（3）
IPC大类 C30（3） C01（2） C23（2）
H01（2）
IPC小类 C30B（3）
IPC C30B029/02（3）
发明人
公开年 2022（3）
申请年 2022（2） 
专利权人

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Producing single crystal metal layer used as a catalyst layer in a process of two-dimensional (2D) material growth by arranging metal source material and deposition substrate in a closely-spaced relationship, and heating under vacuum.

BURTON O J, HOFMANN S