国家/地区 China（14）
关键词 GRAPHENE（2） MICROSTRUCTURE（2）
出版物 RSC ADVANCES（4） MATERIALS LETTERS（2）
出版时间 2014（5） 2015（4） 2018（3） 2016（2）
机构 CHINESE ACAD SCI（16）
作者 CHENG XH（16）

Low-temperature deposition of multilayer graphene with continuous morphology and few defects

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

GAO XL, ZHENG L, CHENG XH, XIN WB, YE PY, ZHANG DW

Ambipolar Graphene-Quantum Dot Phototransistors with CMOS Compatibility

ADVANCED OPTICAL MATERIALS

ZHENG L, ZHOU WJ, NING ZJ, WANG G, CHENG XH, HU WD, ZHOU W, LIU ZD, YANG SW, XU KM, LUO M, YU YH

Low temperature growth of three-dimensional network of graphene for high-performance supercapacitor electrodes

MATERIALS LETTERS

ZHENG L, CHENG XH, YE PY, SHEN LY, WANG Q, ZHANG DL, GU ZY, ZHOU W, WUA DP, YU YH

Decreasing graphene synthesis temperature by catalytic metal engineering and thermal processing

RSC ADVANCES

ZHENG L, CHENG XH, YE PY, SHEN LY, WANG Q, ZHANG DL, GU ZY, ZHOU W, WU DP, YU YH

Effects of rapid thermal annealing on properties of HfAlO films directly deposited by ALD on graphene

MATERIALS LETTERS

ZHENG L, CHENG XH, CAO D, WANG ZJ, XU DW, XIA C, SHEN LY, YU YH

Improvement of Al2O3 Films on Graphene Grown by Atomic Layer Deposition with Pre-H2O Treatment

ACS APPLIED MATERIALS INTERFACES

ZHENG L, CHENG XH, CAO D, WANG G, WANG ZJ, XU DW, XIA C, SHEN LY, YU YH, SHEN DS

Property transformation of graphene with Al2O3 films deposited directly by atomic layer deposition

APPLIED PHYSICS LETTERS

ZHENG L, CHENG XH, CAO D, WANG ZJ, XIA C, YU YH, SHEN DS

Al2O3-Gd2O3 double-films grown on graphene directly by H2O-assisted atomic layer deposition

RSC ADVANCES

ZHENG L, CHENG XH, CAO D, ZHANG DL, WANG ZJ, XU DW, XIA C, SHEN LY, YU YH

HfO2 dielectric film growth directly on graphene by H2O-based atomic layer deposition

JOURNAL OF VACUUM SCIENCE TECHNOLOGY A

ZHENG L, CHENG XH, CAO D, WANG ZJ, XU DW, XIA C, SHEN LY, YU YH

Performance Improvement and Current Collapse Suppression of Al2O3/AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation

IEEE ELECTRON DEVICE LETTERS

SHEN LY, ZHANG DL, CHENG XH, ZHENG L, XU DW, WANG Q, LI JJ, CAO D, YU YH