国家/地区 Italy（8）
关键词 GRAPHENE（6） SIMULATION（4） TRANSISTOR（4）
TERAHERTZ OPERATION（3） CUTOFF FREQUENCY（2） MODELING（2）
出版物 IEEE TRANSACTIONS O.（3） IEEE ELECTRON DEVIC.（2） SOLIDSTATE ELECTRON.（2）
出版时间 2014（3） 2015（3） 2013（2）
机构 UNIV BOLOGNA（8）
作者 DI LECCE V（9）

Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback

SOLIDSTATE ELECTRONICS

GRASSI R, GNUDI A, DI LECCE V, GNANI E, REGGIANI S, BACCARANI G

Semianalytical quantum model for graphene field-effect transistors

JOURNAL OF APPLIED PHYSICS

PUGNAGHI C, GRASSI R, GNUDI A, DI LECCE V, GNANI E, REGGIANI S, BACCARANI G

Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

IEEE TRANSACTIONS ON ELECTRON DEVICES

GRASSI R, GNUDI A, DI LECCE V, GNANI E, REGGIANI S, BACCARANI G

Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation

IEEE TRANSACTIONS ON ELECTRON DEVICES

DI LECCE V, GRASSI R, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation

IEEE TRANSACTIONS ON ELECTRON DEVICES

DI LECCE V, GRASSI R, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Simulation of Graphene Base Transistors With Bilayer Tunnel Oxide Barrier: Model Calibration and Performance Projection

IEEE ELECTRON DEVICE LETTERS

DI LECCE V, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Going ballistic: Graphene hot electron transistors

SOLID STATE COMMUNICATIONS

VAZIRI S, SMITH AD, OSTLING M, LUPINA G, DABROWSKI J, LIPPERT G, MEHR W, DRIUSSI F, VENICA S, DI LECCE V, GNUDI A, KONIG M, RUHL G, BELETE M, LEMME MC

Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics

SOLIDSTATE ELECTRONICS

DI LECCE V, GRASSI R, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Simulations of Graphene Base Transistors With Improved Graphene Interface Model

IEEE ELECTRON DEVICE LETTERS

DI LECCE V, GNUDI A, GNANI E, REGGIANI S, BACCARANI G