国家/地区 Russia（18）
关键词 GRAPHENE（7） RAMAN SPECTROSCOPY（6） 4HSIC（2）
AFM（2） STRAIN（2）
出版物 SEMICONDUCTORS（5） FULLERENES NANOTUBE.（3）
出版时间 2020（7） 2018（4） 2021（3） 2017（2） 2019（2）
机构 IOFFE INST（11） RUSSIAN ACAD.（2）
作者 ELISEYEV IA（19）

Detection of lysine molecular ions in solution gated field effect transistors based on unmodified graphene

JOURNAL OF APPLIED PHYSICS

BUTKO AV, BUTKO VY, LEBEDEV SP, LEBEDEV AA, DAVYDOV VY, ELISEYEV IA, KUMZEROV YA

Raman Studies of Graphene Films Grown on 4H-SiC Subjected to Deposition of Ni

SEMICONDUCTORS

ELISEYEV IA, DAVYDOV VY, SMIRNOV AN, BELOV SV, ZUBOV AV, LEBEDEV SP, LEBEDEV AA

Investigation of epitaxial graphene via Raman spectroscopy: Origins of phonon mode asymmetries and line width deviations

CARBON

HAHNLEIN B, LEBEDEV SP, ELISEYEV IA, SMIRNOV AN, DAVYDOV VY, ZUBOV AV, LEBEDEV AA, PEZOLDT J

A Study of the Photoresponse in Graphene Produced by Chemical Vapor Deposition

SEMICONDUCTORS

BABICHEV AV, KADINSKAYA SA, SHUBINA KY, VASILIEV AA, BLOKHIN AA, MOISEEV EI, BLOKHIN SA, MUKHIN IS, ELISEYEV IA, DAVYDOV VY, BRUNKOV PN, KRYZHANOVSKAYA NV, EGOROV AY

Transformation of the buffer layer grown on 4H-SiC to single-layer graphene by ex situ hydrogen intercalation

FULLERENES NANOTUBES CARBON NANOSTRUCTURES

ELISEYEV IA, SMIRNOV AN, LEBEDEV SP, PANTELEEV VN, DEMENTEV PA, PEZOLDT J, HARTUNG G, KROGER J, ZUBOV AV, LEBEDEV AA

Comparison of graphene films grown on 6H-SiC and 4H-SiC substrates

FULLERENES NANOTUBES CARBON NANOSTRUCTURES

LEBEDEV SP, AMEL CHUK DG, ELISEYEV IA, NIKITINA IP, DEMENTEV PA, ZUBOV AV, LEBEDEV AA

Surface morphology control of the SiC (0001) substrate during the graphene growth

FULLERENES NANOTUBES CARBON NANOSTRUCTURES

LEBEDEV SP, AMEL CHUK DG, ELISEYEV IA, BARASH IS, DEMENTEV PA, ZUBOV AV, LEBEDEV AA

Investigation of the Hydrogen Etching Effect of the SiC Surface on the Formation of Graphene Films

TECHNICAL PHYSICS

LEBEDEV SP, BARASH IS, ELISEYEV IA, DEMENTEV PA, LEBEDEV AA, BULAT PV

Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC

SEMICONDUCTORS

ELISEYEV IA, DAVYDOV VY, SMIRNOV AN, NESTOKLON MO, DEMENTEV PA, LEBEDEV SP, LEBEDEV AA, ZUBOV AV, MATHEW S, PEZOLDT J, BOKAI KA, USACHOV DY

Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

JOURNAL OF CRYSTAL GROWTH

LUNDIN WV, ZAVARIN EE, SAKHAROV AV, ZAKHEIM DA, DAVYDOV VY, SMIRNOV AN, ELISEYEV IA, YAGOVKINA MA, BRUNKOV PN, LUNDINA EY, MARKOV LK, TSATSULNIKOV AF