国家/地区 Germany（11）
关键词 EPITAXIAL GRAPHENE（2）
出版物 CARBON（3） NEW JOURNAL OF PHYS.（3） JOURNAL OF PHYSICS .（2）
出版时间 2013（6） 2014（2）
机构 UNIV ERLANGE.（4） PAUL DRUDE I.（3） TECH UNIV CH.（2）
作者 FROMM F（11）

Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WEHRFRITZ P, FROMM F, MALZER S, SEYLLER T

Buffer layer free graphene on SiC(0001) via interface oxidation in water vapor

CARBON

OSTLER M, FROMM F, KOCH RJ, WEHRFRITZ P, SPECK F, VITA H, BOTTCHER S, HORN K, SEYLLER T

Structural investigation of nanocrystalline graphene grown on (6 root 3 x 6 root 3)R30 degrees-reconstructed SiC surfaces by molecular beam epitaxy

NEW JOURNAL OF PHYSICS

SCHUMANN T, DUBSLAFF M, OLIVEIRA MH, HANKE M, FROMM F, SEYLLER T, NEMEC L, BLUM V, SCHEFFLER M, LOPES JMJ, RIECHERT H

Looking behind the scenes: Raman spectroscopy of top-gated epitaxial graphene through the substrate

NEW JOURNAL OF PHYSICS

FROMM F, WEHRFRITZ P, HUNDHAUSEN M, SEYLLER T

Mono- and few-layer nanocrystalline graphene grown on Al2O3(0001) by molecular beam epitaxy

CARBON

OLIVEIRA MH, SCHUMANN T, GARGALLOCABALLERO R, FROMM F, SEYLLER T, RAMSTEINER M, TRAMPERT A, GEELHAAR L, LOPES JMJ, RIECHERT H

Robust Graphene Membranes in a Silicon Carbide Frame

ACS NANO

WALDMANN D, BUTZ B, BAUER S, ENGLERT JM, JOBST J, ULLMANN K, FROMM F, AMMON M, ENZELBERGEE M, HIRSCH A, MAIER S, SCHMUKI P, SEYLLER T, SPIECKER E, WEBERT HB

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

NEW JOURNAL OF PHYSICS

FROMM F, OLIVEIRA MH, MOLINASANCHEZ A, HUNDHAUSEN M, LOPES JMJ, RIECHERT H, WIRTZ L, SEYLLER T

Formation of high-quality quasi-free-standing bilayer graphene on SiC(0001) by oxygen intercalation upon annealing in air

CARBON

OLIVEIRA MH, SCHUMANN T, FROMM F, KOCH R, OSTLER M, RAMSTEINER M, SEYLLER T, LOPES JMJ, RIECHERT H

Implanted bottom gate for epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WALDMANN D, JOBST J, FROMM F, SPECK F, SEYLLER T, KRIEGER M, WEBER HB

The quasi-free-standing nature of graphene on H-saturated SiC(0001)

APPLIED PHYSICS LETTERS

SPECK F, JOBST J, FROMM F, OSTLER M, WALDMANN D, HUNDHAUSEN M, WEBER HB, SEYLLER T