国家/地区 Usa（9）
关键词
出版物
出版时间 2014（4） 2012（3）
机构 GEORGIA INST.（7）
作者 GRAHAM S（9）

Formation of Air Stable Graphene p-n-p Junctions Using an Amine-Containing Polymer Coating

ADVANCED MATERIALS INTERFACES

SOJOUDI H, BALTAZAR J, TOLBERT L, HENDERSON C, GRAHAM S

Photochemical Doping and Tuning of the Work Function and Dirac Point in Graphene Using Photoacid and Photobase Generators

ADVANCED FUNCTIONAL MATERIALS

BALTAZAR J, SOJOUDI H, PANIAGUA SA, ZHANG SY, LAWSON RA, MARDER SR, GRAHAM S, TOLBERT LM, HENDERSON CL

Reduced Graphene Oxide Thin Films as Ultrabarriers for Organic Electronics

ADVANCED ENERGY MATERIALS

YAMAGUCHI H, GRANSTROM J, NIE WY, SOJOUDI H, FUJITA T, VOIRY D, CHEN MW, GUPTA G, MOHITE AD, GRAHAM S, CHHOWALLA M

Production of heavily n- and p-doped CVD graphene with solution-processed redox-active metal-organic species

MATERIALS HORIZONS

PANIAGUA SA, BALTAZAR J, SOJOUDI H, MOHAPATRA SK, ZHANG SY, HENDERSON CL, GRAHAM S, BARLOW S, MARDER SR

Transfer-Free Selective Area Synthesis of Graphene Using Solid-State Self-Segregation of Carbon In Cu/Ni Bilayers

ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY

SOJOUDI H, GRAHAM S

Facile Formation of Graphene P-N Junctions Using Self-Assembled Monolayers

JOURNAL OF PHYSICAL CHEMISTRY C

BALTAZAR J, SOJOUDI H, PANIAGUA SA, KOWALIK J, MARDER SR, TOLBERT LM, GRAHAM S, HENDERSON CL

Creating Graphene p-n Junctions Using Self-Assembled Monolayers

ACS APPLIED MATERIALS INTERFACES

SOJOUDI H, BALTAZAR J, TOLBERT LM, HENDERSON CL, GRAHAM S

Impact of post-growth thermal annealing and environmental exposure on the unintentional doping of CVD graphene films

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

SOJOUDI H, BALTAZAR J, HENDERSON C, GRAHAM S

Signature Vibrational Bands for Defects in CVD Single-Layer Graphene by Surface-Enhanced Raman Spectroscopy

JOURNAL OF PHYSICAL CHEMISTRY LETTERS

MATZ DL, SOJOUDI H, GRAHAM S, PEMBERTON JE