国家/地区 Usa（4）
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出版物 APPLIED PHYSICS LETTERS（4）
出版时间
机构
作者 GU G（4）

Tunneling characteristics in chemical vapor deposited graphene-hexagonal boron nitride-graphene junctions

APPLIED PHYSICS LETTERS

ROY T, LIU L, DE LA BARRERA S, CHAKRABARTI B, HESABI ZR, JOINER CA, FEENSTRA RM, GU G, VOGEL EM

Modulation doping of graphene: An approach toward manufacturable devices

APPLIED PHYSICS LETTERS

GU G, XIE ZJ

Morphology of graphene on SiC(000(1)over-bar) surfaces

APPLIED PHYSICS LETTERS

LUXMI, FISHER PJ, SRIVASTAVA N, FEENSTRA RM, SUN YG, KEDZIERSKI J, HEALEY P, GU G

Field effect in epitaxial graphene on a silicon carbide substrate

APPLIED PHYSICS LETTERS

GU G, NIE S, FEENSTRA RM, DEVATY RP, CHOYKE WJ, CHAN WK, KANE MG