国家/地区 Usa（7）
关键词 GRAPHENE（3） EPITAXIAL GRAPHENE（2） NUCLEATION（2）
出版物 APPLIED PHYSICS LET.（2） NANO LETTERS（2）
出版时间 2010（3） 2011（2）
机构 USN（4）
作者 HITE JK（7）

Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process

APPLIED PHYSICS LETTERS

NATH A, KOEHLER AD, JERNIGAN GG, WHEELER VD, HITE JK, HERNANDEZ SC, ROBINSON ZR, GARCES NY, MYERSWARD RL, EDDY CR, GASKILL DK, RAO MV

Epitaxial graphene surface preparation for atomic layer deposition of Al2O3

JOURNAL OF APPLIED PHYSICS

GARCES NY, WHEELER VD, HITE JK, JERNIGAN GG, TEDESCO JL, NEPAL N, EDDY CR, GASKILL DK

Epitaxial Graphene Nucleation on C-Face Silicon Carbide

NANO LETTERS

HITE JK, TWIGG ME, TEDESCO JL, FRIEDMAN AL, MYERSWARD RL, EDDY CR, GASKILL DK

Quantum Linear Magnetoresistance in Multi layer Epitaxial Graphene

NANO LETTERS

FRIEDMAN AL, TEDESCO JL, CAMPBELL PM, CULBERTSON JC, AIFER E, PERKINS FK, MYERSWARD RL, HITE JK, EDDY CR, JERNIGAN GG, GASKILL DK

Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

APPLIED PHYSICS LETTERS

TEDESCO JL, JERNIGAN GG, CULBERTSON JC, HITE JK, YANG Y, DANIELS KM, MYERSWARD RL, EDDY CR, ROBINSON JA, TRUMBULL KA, WETHERINGTON MT, CAMPBELL PM, GASKILL DK

Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

ACS NANO

CALDWELL JD, ANDERSON TJ, CULBERTSON JC, JERNIGAN GG, HOBART KD, KUB FJ, TADJER MJ, TEDESCO JL, HITE JK, MASTRO MA, MYERSWARD RL, EDDY CR, CAMPBELL PM, GASKILL DK

Challenges to graphene growth on SiC(000(1)over-bar): Substrate effects, hydrogen etching and growth ambient

CARBON

ROBINSON ZR, JERNIGAN GG, CURRIE M, HITE JK, BUSSMANN KM, NYAKITI LO, GARCES NY, NATH A, RAO MV, WHEELER VD, MYERSWARD RL, WOLLMERSHAUSER JA, FEIGELSON BN, EDDY CR, GASKILL DK