国家/地区 Taiwan（4）
关键词 GRAPHENE（3） THREADING DISLOCATI.（2）
出版物 APPLIED PHYSICS LET.（2）
出版时间 2019（2） 2023（2）
机构 NATL TAIWAN .（3）
作者 KE WC（5）

Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

ACS APPLIED MATERIALS INTERFACES

KE WC, TESFAY ST, SEONG TY, LIANG ZY, CHIANG CY, CHEN CY, SON W, CHANG KJ, LIN JC

Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer

APPLIED SURFACE SCIENCE

KE WC, LIANG ZY, TESFAY ST, CHIANG CY, YANG CY, CHANG KJ, LIN JC

Improving contact performance of graphene on p-type GaN thin films with V-pits microstructures

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

SONG RN, KE WC

Phonon polarization deformation in graphene induced by substrate coupling strengths

APPLIED PHYSICS LETTERS

CHANG YC, DAS B, CHIANG YF, CHANG WH, CHEN YC, KESARWANI R, KE WC, LAN YW, LU TH

Improved wavelength stability and heat dissipation of InGaN-based light-emitting diodes using a graphene interlayer on patterned sapphire substrate

APPLIED PHYSICS LETTERS

KE WC, CHIANG CY, LIN YJP, LIAO YS, CHENG WH, CHANG KJ, LIN JC