国家/地区 Korea（4）
关键词 GRAPHENE BARRISTOR（4）
出版物
出版时间 2018（2）
机构 GWANGJU INST.（3）
作者 KIM SY（4）

Performance Degradation in Graphene-ZnO Barristors Due to Graphene Edge Contact

ACS APPLIED MATERIALS INTERFACES

KIM SY, RYOU J, KIM MJ, KIM K, LEE Y, KIM SM, HWANG HJ, KIM YH, LEE BH

Threshold Voltage Modulation of a Graphene-ZnO Barristor Using a Polymer Doping Process

ADVANCED ELECTRONIC MATERIALS

KIM SY, HWANG J, KIM YJ, HWANG HJ, SON M, REVANNATH N, HAM MH, CHO K, LEE BH

Ternary Full Adder Using Multi-Threshold Voltage Graphene Barristors

IEEE ELECTRON DEVICE LETTERS

HEO S, KIM S, KIM K, LEE H, KIM SY, KIM YJ, KIM SM, LEE HI, LEE S, KIM KR, KANG S, LEE BH

Very-Low-Temperature Integrated Complementary Graphene-Barristor-Based Inverter for Thin-Film Transistor Applications

ANNALEN DER PHYSIK

HEO S, LEE HI, LEE H, KIM SM, KIM K, KIM YJ, KIM SY, KIM JH, YOON MH, LEE BH