国家/地区 China（12）
关键词 GRAPHENE（4） EPITAXIAL GRAPHENE（2）
出版物 APPLIED PHYSICS LET.（3） ACTA PHYSICA SINICA（2） CHINESE PHYSICS B（2）
出版时间 2014（4） 2016（4） 2013（2）
机构 HEBEI SEMICOND RES INST（12）
作者 LI J（12）

Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

APPLIED PHYSICS LETTERS

YU C, LIU QB, LI J, LU WL, HE ZZ, CAI SJ, FENG ZH

An ultra clean self-aligned process for high maximum oscillation frequency graphene transistors

CARBON

FENG ZH, YU C, LI J, LIU QB, HE ZZ, SONG XB, WANG JJ, CAI SJ

Radio-Frequency Performance of Epitaxial Graphene Field-Effect Transistors on Sapphire Substrates

CHINESE PHYSICS LETTERS

LIU QB, YU C, LI J, SONG XB, HE ZZ, LU WL, GU GD, WANG YG, FENG ZH

Quasi-equilibrium growth of monolayer epitaxial graphene on SiC (0001)

ACTA PHYSICA SINICA

YU C, LI J, LIU QB, CAI SJ, FENG ZH

Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001)

SOLID STATE COMMUNICATIONS

YU C, LI J, GAO KH, LIN T, LIU QB, DUN SB, HE ZZ, CAI SJ, FENG ZH

Buffer layer induced band gap and surface low energy optical phonon scattering in epitaxial graphene on SiC(0001)

APPLIED PHYSICS LETTERS

YU C, LI J, LIU QB, DUN SB, HE ZZ, ZHANG XW, CAI SJ, FENG ZH

Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0 degrees and 8 degrees Si-terminated 4H-SiC substrates

CHINESE PHYSICS B

LI J, WANG L, FENG ZH, YU C, LIU QB, DUN SB, CAI SJ

Effect of surface pretreatment on GaN van der Waals epitaxy growth on graphene

ACTA PHYSICA SINICA

WANG B, FANG YL, YIN JY, LIU QB, ZHANG ZR, GUO YM, LI J, LU WL, FENG ZH

High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

CHINESE PHYSICS B

HE ZZ, YANG KW, YU C, LIU QB, WANG JJ, LI J, LU WL, FENG ZH, CAI SJ

Graphene Amplifier MMIC on SiC Substrate

IEEE ELECTRON DEVICE LETTERS

YU C, HE ZZ, LIU QB, SONG XB, XU P, HAN TT, LI J, FENG ZH, CAI SJ