国家/地区 Germany（25）
关键词 MOLECULAR BEAM EPIT.（5） GRAPHENE（4） EPITAXIAL GRAPHENE（2）
GROWTH（2） VAN DER WAALS EPITA.（2） VAN DER WAALS HETER.（2）
出版物 APPLIED PHYSICS LET.（4） CARBON（3） NEW JOURNAL OF PHYS.（3）
PHYSICAL REVIEW B（3） 2D MATERIALS（2）
出版时间 2017（6） 2013（5） 2014（2） 2016（2） 2020（2） 2023（2）
机构 PAUL DRUDE I.（15）
作者 LOPES JMJ（25）

Conduction mechanisms in epitaxial NiO/Graphene gas sensors

SENSORS ACTUATORS BCHEMICAL

NIAVOL SS, BUDDE M, PAPADOGIANNI A, HEILMANN M, MOGHADDAM HM, ALDAO CM, LIGORIO G, LISTKRATOCHVIL EJW, LOPES JMJ, BARSAN N, BIERWAGEN O, SCHIPANI F

Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/Hexagonal Boron Nitride Heterostructures

ACS APPLIED MATERIALS INTERFACES

HEILMANN M, PRIKHODKO AS, HANKE M, SABELFELD A, BORGARDT NI, LOPES JMJ

Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

2D MATERIALS

HEILMANN M, BASHOUTI M, RIECHERT H, LOPES JMJ

Molecular beam epitaxy of graphene on ultra-smooth nickel: growth mode and substrate interactions

NEW JOURNAL OF PHYSICS

WOFFORD JM, OLIVEIRA MH, SCHUMANN T, JENICHEN B, RAMSTEINER M, JAHN U, FOLSCH S, LOPES JMJ, RIECHERT H

Effect of buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

PHYSICAL REVIEW B

SCHUMANN T, DUBSLAFF M, OLIVEIRA MH, HANKE M, LOPES JMJ, RIECHERT H

Structural investigation of nanocrystalline graphene grown on (6 root 3 x 6 root 3)R30 degrees-reconstructed SiC surfaces by molecular beam epitaxy

NEW JOURNAL OF PHYSICS

SCHUMANN T, DUBSLAFF M, OLIVEIRA MH, HANKE M, FROMM F, SEYLLER T, NEMEC L, BLUM V, SCHEFFLER M, LOPES JMJ, RIECHERT H

Acousto-electric transport in epitaxial monolayer graphene on SiC

APPLIED PHYSICS LETTERS

SANTOS PV, SCHUMANN T, OLIVEIRA MH, LOPES JMJ, RIECHERT H

Mono- and few-layer nanocrystalline graphene grown on Al2O3(0001) by molecular beam epitaxy

CARBON

OLIVEIRA MH, SCHUMANN T, GARGALLOCABALLERO R, FROMM F, SEYLLER T, RAMSTEINER M, TRAMPERT A, GEELHAAR L, LOPES JMJ, RIECHERT H

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

NEW JOURNAL OF PHYSICS

FROMM F, OLIVEIRA MH, MOLINASANCHEZ A, HUNDHAUSEN M, LOPES JMJ, RIECHERT H, WIRTZ L, SEYLLER T

Formation of high-quality quasi-free-standing bilayer graphene on SiC(0001) by oxygen intercalation upon annealing in air

CARBON

OLIVEIRA MH, SCHUMANN T, FROMM F, KOCH R, OSTLER M, RAMSTEINER M, SEYLLER T, LOPES JMJ, RIECHERT H