国家/地区 Usa（11）
关键词
出版物 APPLIED PHYSICS LET.（4） ACS APPLIED MATERIA.（2） NANO LETTERS（2）
出版时间 2016（4） 2013（3）
机构 NORTHWESTERN.（8）
作者 MARKS TJ（11）

Ultrahigh Vacuum Self-Assembly of Rotationally Commensurate C8-BTBT/MoS2/Graphene Mixed-Dimensional Heterostructures

CHEMISTRY OF MATERIALS

LIU XL, BALLA I, SANGWAN VK, USTA H, FACCHETTI A, MARKS TJ, HERSAM MC

Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics

APPLIED PHYSICS LETTERS

SANGWAN VK, JARIWALA D, EVERAERTS K, MCMORROW JJ, HE JT, GRAYSON M, LAUHON LJ, MARKS TJ, HERSAM MC

Near-field microwave microscopy of high-kappa oxides grown on graphene with an organic seeding layer

APPLIED PHYSICS LETTERS

TSELEV A, SANGWAN VK, JARIWALA D, MARKS TJ, LAUHON LJ, HERSAM MC, KALININ SV

Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis

APPLIED PHYSICS LETTERS

PRADO MC, JARIWALA D, MARKS TJ, HERSAM MC

Quantitatively Enhanced Reliability and Uniformity of High-kappa Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers

NANO LETTERS

SANGWAN VK, JARIWALA D, FILIPPONE SA, KARMEL HJ, JOHNS JE, ALABOSON JMP, MARKS TJ, LAUHON LJ, HERSAM MC

Graphene Oxide Inter layers for Robust, High-Efficiency Organic Photovoltaics

JOURNAL OF PHYSICAL CHEMISTRY LETTERS

MURRAY IP, LOU SJ, COTE LJ, LOSER S, KADLECK CJ, XU T, SZARKO JM, ROLCZYNSKI BS, JOHNS JE, HUANG JX, YU LP, CHEN LX, MARKS TJ, HERSAM MC

High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes

ACS APPLIED MATERIALS INTERFACES

SECOR EB, SMITH J, MARKS TJ, HERSAM MC

Probing Out-of-Plane Charge Transport in Black Phosphorus with Graphene-Contacted Vertical Field-Effect Transistors

NANO LETTERS

KANG J, JARIWALA D, RYDER CR, WELLS SA, CHOI Y, HWANG E, CHO JH, MARKS TJ, HERSAM MC

Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics

ACS APPLIED MATERIALS INTERFACES

ARNOLD HN, CRESS CD, MCMORROW JJ, SCHMUCKER SW, SANGWAN VK, JABERANSARI L, KUMAR R, PUNTAMBEKAR KP, LUCK KA, MARKS TJ, HERSAM MC

Reducing flicker noise in chemical vapor deposition graphene field-effect transistors

APPLIED PHYSICS LETTERS

ARNOLD HN, SANGWAN VK, SCHMUCKER SW, CRESS CD, LUCK KA, FRIEDMAN AL, ROBINSON JT, MARKS TJ, HERSAM MC