国家/地区 Usa（7）
关键词 GRAPHENE（3）
出版物 APPLIED PHYSICS LET.（3） ACS NANO（2）
出版时间 2013（2）
机构 UNIV CALIF B.（5）
作者 SALAHUDDIN S（7）

Negative Differential Resistance and Steep Switching in Chevron Graphene Nanoribbon Field-Effect Transistors

IEEE ELECTRON DEVICE LETTERS

SMITH S, LLINAS JP, BOKOR J, SALAHUDDIN S

Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

ACS NANO

BUTLER SZ, HOLLEN SM, CAO LY, CUI Y, GUPTA JA, GUTIERREZ HR, HEINZ TF, HONG SS, HUANG JX, ISMACH AF, JOHNSTONHALPERIN E, KUNO M, PLASHNITSA VV, ROBINSON RD, RUOFF RS, SALAHUDDIN S, SHAN J, SHI L, SPENCER MG, TERRONES M, WINDL W, GOLDBERGER JE

Ballistic I-V Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF Applications

IEEE TRANSACTIONS ON ELECTRON DEVICES

GANAPATHI K, YOON Y, LUNDSTROM M, SALAHUDDIN S

Dissipative transport in rough edge graphene nanoribbon tunnel transistors

APPLIED PHYSICS LETTERS

YOON Y, SALAHUDDIN S

Role of phonon scattering in graphene nanoribbon transistors: Nonequilibrium Green's function method with real space approach

APPLIED PHYSICS LETTERS

YOON Y, NIKONOV DE, SALAHUDDIN S

Inverse temperature dependence of subthreshold slope in graphene nanoribbon tunneling transistors

APPLIED PHYSICS LETTERS

YOON Y, SALAHUDDIN S

Accelerated Ultrafast Magnetization Dynamics at Graphene/CoGd Interfaces

ACS NANO

MONDAL S, LIN YX, POLLEY D, SU C, ZETTL A, SALAHUDDIN S, BOKOR J