国家/地区 Germany（12）
关键词 GRAPHENE（4） GRAPHENE NANORIBBON（2） THREE TERMINAL JUNC.（2）
出版物 APPLIED PHYSICS LET.（2） JOURNAL OF APPLIED .（2）
出版时间 2010（3） 2011（3） 2012（2）
机构 TECH UNIV IL.（9） TU ILMENAU（2）
作者 SCHWIERZ F（12）

Electrical gating and rectification in graphene three-terminal junctions

APPLIED SURFACE SCIENCE

HANDEL B, HAHNLEIN B, GOCKERITZ R, SCHWIERZ F, PEZOLDT J

Graphene Transistors: Status, Prospects, and Problems

PROCEEDINGS OF THE IEEE

SCHWIERZ F

Side-gate graphene field-effect transistors with high transconductance

APPLIED PHYSICS LETTERS

HAHNLEIN B, HANDEL B, PEZOLDT J, TOPFER H, GRANZNER R, SCHWIERZ F

Graphene field effect transistor improvement by graphene-silicon dioxide interface modification

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

PEZOLDT J, HUMMEL C, SCHWIERZ F

Epitaxial graphene three-terminal junctions

APPLIED PHYSICS LETTERS

GOCKERITZ R, PEZOLDT J, SCHWIERZ F

Modeling of the steady state characteristics of large-area graphene field-effect transistors

JOURNAL OF APPLIED PHYSICS

THIELE S, SCHWIERZ F

ELECTRONICS Industry-compatible graphene transistors

NATURE

SCHWIERZ F

Graphene transistors

NATURE NANOTECHNOLOGY

SCHWIERZ F

Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels

JOURNAL OF APPLIED PHYSICS

THIELE SA, SCHAEFER JA, SCHWIERZ F

Ambient and temperature dependent electric properties of backgate graphene transistors

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

HUMMEL C, SCHWIERZ F, HANISCH A, PEZOLDT J