国家/地区 Netherlands（19） Usa（2）
关键词 GRAPHENE（9） BILAYER GRAPHENE（2） HEXAGONAL BORON NIT.（2）
出版物 NANO LETTERS（8） APPLIED PHYSICS LET.（3） PHYSICAL REVIEW B（3）
出版时间 2012（7） 2007（3） 2008（2） 2010（2） 2014（2）
机构 DELFT UNIV T.（18） COLUMBIA UNI.（2）
作者 VANDERSYPEN LMK（21）

Electron Beam Induced Deposition on graphene on silicon oxide and hexagonal boron nitride: A comparison of substrates

MICROELECTRONIC ENGINEERING

HARI S, GOOSSENS AM, VANDERSYPEN LMK, HAGEN CW

Ballistic transport in graphene grown by chemical vapor deposition

APPLIED PHYSICS LETTERS

CALADO VE, ZHU SE, GOSWAMI S, XU Q, WATANABE K, TANIGUCHI T, JANSSEN GCAM, VANDERSYPEN LMK

Understanding the catalyst-free transformation of amorphous carbon into graphene by current-induced annealing

SCIENTIFIC REPORTS

BARREIRO A, BORRNERT F, AVDOSHENKO SM, RELLINGHAUS B, CUNIBERTI G, RUMMELI MH, VANDERSYPEN LMK

Quantum Dots at Room Temperature Carved out from Few-Layer Graphene

NANO LETTERS

BARREIRO A, VAN DER ZANT HSJ, VANDERSYPEN LMK

Formation and control of wrinkles in graphene by the wedging transfer method

APPLIED PHYSICS LETTERS

CALADO VE, SCHNEIDER GF, THEULINGS AMMG, DEKKER C, VANDERSYPEN LMK

Lattice Expansion in Seamless Bilayer Graphene Constrictions at High Bias

NANO LETTERS

BORRNERT F, BARREIRO A, WOLF D, KATSNELSON MI, BUCHNER B, VANDERSYPEN LMK, RUMMELI MH

Gate-Defined Confinement in Bilayer Graphene-Hexagonal Boron Nitride Hybrid Devices

NANO LETTERS

GOOSSENS AM, DRIESSEN SCM, BAART TA, WATANABE K, TANIGUCHI T, VANDERSYPEN LMK

Zero-bias conductance peak and Josephson effect in graphene-NbTiN junctions

PHYSICAL REVIEW B

POPINCIUC M, CALADO VE, LIU XL, AKHMEROV AR, KLAPWIJK TM, VANDERSYPEN LMK

Graphene at High Bias: Cracking, Layer by Layer Sublimation, and Fusing

NANO LETTERS

BARREIRO A, BORRNERT F, RUMMELI MH, BUCHNER B, VANDERSYPEN LMK

Mechanical cleaning of graphene

APPLIED PHYSICS LETTERS

GOOSSENS AM, CALADO VE, BARREIRO A, WATANABE K, TANIGUCHI T, VANDERSYPEN LMK