国家/地区 England（4） Russia（2）
关键词 GRAPHENE（6）
出版物 SEMICONDUCTORS（2）
出版时间 2019（2） 2020（2）
机构 UNIV NOTTING.（3） RUSSIAN ACAD.（2）
作者 VDOVIN EE（6）

On the Role of Structural Imperfections of Graphene in Resonant Tunneling through Localized States in the h-BN Barrier of van-der-Waals Heterostructures

SEMICONDUCTORS

GRIGORIEV MV, GHAZARYAN DA, VDOVIN EE, KHANIN YN, MOROZOV SV, NOVOSELOV KS

Defect-Assisted High Photoconductive UV-Visible Gain in Perovskite-Decorated Graphene Transistors

ACS APPLIED ELECTRONIC MATERIALS

COTTAM ND, ZHANG CX, TURYANSKA L, EAVES L, KUDRYNSKYI Z, VDOVIN EE, PATANE A, MAKAROVSKY O

Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures

SEMICONDUCTORS

KHANIN YN, VDOVIN EE, MISHCHENKO A, NOVOSELOV KS

Photoquantum Hall Effect and Light-Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures

ADVANCED FUNCTIONAL MATERIALS

BHUIYAN MA, KUDRYNSKYI ZR, MAZUMDER D, GREENER JDG, MAKAROVSKY O, MELLOR CJ, VDOVIN EE, PIOT BA, LOBANOVA II, KOVALYUK ZD, NAZAROVA M, MISHCHENKO A, NOVOSELOV KS, CAO Y, EAVES L, YUSA G, PATANE A

High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures

ADVANCED MATERIALS

MUDD GW, SVATEK SA, HAGUE L, MAKAROVSKY O, KUDRYNSKYI ZR, MELLOR CJ, BETON PH, EAVES L, NOVOSELOV KS, KOVALYUK ZD, VDOVIN EE, MARSDEN AJ, WILSON NR, PATANE A

Graphene FETs with high and low mobilities have universal temperature-dependent properties

NANOTECHNOLOGY

GOSLING JH, MOROZOV SV, VDOVIN EE, GREENAWAY MT, KHANIN YN, KUDRYNSKYI Z, PATANE A, EAVES L, TURYANSKA L, FROMHOLD TM, MAKAROVSKY O