国家/地区 Iran（2） Japan（2）
关键词 BAND GAP（16）
出版物 ACS APPLIED MATERIA.（2） CANADIAN JOURNAL OF.（2） JOURNAL OF PHYSICSC.（2）
出版时间 2016（16）
机构
作者

Energetic Stabilities, Structural and Electronic Properties of Monolayer Graphene Doped with Boron and Nitrogen Atoms

ELECTRONICS

VARGHESE SS, SWAMINATHAN S, SINGH KK, MITTAL V

Electronic properties of mutually embedded h-BN and graphene: A first principles study

CHEMICAL PHYSICS LETTERS

YU ZG, ZHANG YW

Band gap engineering in penta-graphene by substitutional doping: first-principles calculations

JOURNAL OF PHYSICSCONDENSED MATTER

BERDIYOROV GR, DIXIT G, MADJET ME

Dirac Cones in Graphene, Interlayer Interaction in Layered Materials, and the Band Gap in MoS2

CRYSTALS

YAKOVKIN IN

The influence of Gaussian strain on sublattice selectivity of impurities in graphene

JOURNAL OF PHYSICSCONDENSED MATTER

LAWLOR JA, ROCHA CG, TORRES V, LATGE A, FERREIRA MS

Trends of elemental adsorption on graphene

CANADIAN JOURNAL OF PHYSICS

WIDJAJA H, ALTARAWNEH M, JIANG ZT

Graphene Monoxide Bilayer As a High-Performance on/off Switching Media for Nanoelectronics

ACS APPLIED MATERIALS INTERFACES

WOO J, YUN KH, CHUNG YC

BAND GAP MODULATION OF GRAPHENE AND GRAPHYNE VIA TETRACYANOETHYLENE ADSORPTION

STUDIA UNIVERSITATIS BABESBOLYAI CHEMIA

MAJIDI R, KARAMI A

Computing the band structure and energy gap of penta-graphene by using DFT and G(o)W(o) approximations

SOLID STATE COMMUNICATIONS

EINOLLAHZADEH H, DARIANI RS, FAZELI SM

Covalent Carbene Functionalization of Graphene: Toward Chemical Band-Gap Manipulation

ACS APPLIED MATERIALS INTERFACES

SAINSBURY T, PASSARELLI M, NAFTALY M, GNANIAH S, SPENCER SJ, POLLARD AJ