国家/地区 Usa（5） China（2）
关键词 BREAKDOWN（12）
出版物 IEEE ELECTRON DEVIC.（3） NANO LETTERS（2）
出版时间 2011（3） 2013（2） 2017（2）
机构 SUNY ALBANY（2）
作者 YU B（3） YU TH（3） BRIGGS B（2） LEE EK（2）
NAGABHIRAVA .（2）

High dielectric and breakdown performances achieved in PVDF/graphene@MXene nanocomposites based on quantum confinement strategy

CERAMICS INTERNATIONAL

FENG YF, ZHOU FR, DAI YM, XU ZC, DENG QH, PENG C

Impulse-Breakdown Characteristics of a High-Power Gas Switch Based on Graphene Cathode

IEEE TRANSACTIONS ON PLASMA SCIENCE

WANG G, SU JC, ZHANG XB, LIU S, PAN YF

Graphene nanoribbon field-effect transistor at high bias

NANOSCALE RESEARCH LETTERS

GHADIRY M, ISMAIL R, SAEIDMANESH M, KHALEDIAN M, ABD MANAF A

High-Field Electrical and Thermal Transport in Suspended Graphene

NANO LETTERS

DORGAN VE, BEHNAM A, CONLEY HJ, BOLOTIN KI, POP E

Local breakdown of the quantum Hall effect in narrow single layer graphene Hall devices

SOLID STATE COMMUNICATIONS

YANIK C, KAYA II

Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment

IEEE ELECTRON DEVICE LETTERS

KANG CG, LEE SK, LEE YG, HWANG HJ, CHO C, LIM SK, HEO J, CHUNG HJ, YANG H, SEO S, LEE BH

Formation of Graphene p-n Junction via Complementary Doping

IEEE ELECTRON DEVICE LETTERS

YU TH, KIM C, LIANG CW, YU B

Bilayer Graphene/Copper Hybrid On-Chip Interconnect: A Reliability Study

IEEE TRANSACTIONS ON NANOTECHNOLOGY

YU TH, LEE EK, BRIGGS B, NAGABHIRAVA B, YU B

Bilayer Graphene System: Current-Induced Reliability Limit

IEEE ELECTRON DEVICE LETTERS

YU TH, LEE EK, BRIGGS B, NAGABHIRAVA B, YU B

Quantum scar and breakdown of universality in graphene: A theoretical insight

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

IYAKUTTI K, RAJESWARAPALANICHAMY R, SURYA VJ, KAWAZOE Y