国家/地区 China（5） Usa（4） Germany（2） Singapore（2）
关键词 DOPING（19）
出版物 APPLIED PHYSICS LET.（6） ACS NANO（5） IEEE TRANSACTIONS O.（2）
NANO LETTERS（2）
出版时间 2010（19）
机构 JILIN UNIV（3） IBM CORP（2）
作者 JIANG Q（3） YU SS（3） ZHENG WT（3） KONG J（2）

Nitrogen/Boron Doping Position Dependence of the Electronic Properties of a Triangular Graphene

ACS NANO

YU SS, ZHENG WT, WANG C, JIANG Q

Conductance of functionalized nanotubes, graphene and nanowires: from ab initio to mesoscopic physics

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

BLASE X, ADESSI C, BIEL B, LOPEZBEZANILLA A, FERNANDEZSERRA MV, MARGINE ER, TRIOZON F, ROCHE S

The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene

ACS NANO

KALBAC M, REINACECCO A, FARHAT H, KONG J, KAVAN L, DRESSELHAUS MS

Multicarrier transport in epitaxial multilayer graphene

APPLIED PHYSICS LETTERS

LIN YM, DIMITRAKOPOULOS C, FARMER DB, HAN SJ, WU YQ, ZHU WJ, GASKILL DK, TEDESCO JL, MYERSWARD RL, EDDY CR, GRILL A, AVOURIS P

Mechanisms of doping graphene

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

PINTO H, JONES R, GOSS JP, BRIDDON PR

Remarkably low turn-on field emission in undoped, nitrogen-doped, and boron-doped graphene

APPLIED PHYSICS LETTERS

PALNITKAR UA, KASHID RV, MORE MA, JOAG DS, PANCHAKARLA LS, RAO CNR

Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type doping

APPLIED PHYSICS LETTERS

HEYDRICH S, HIRMER M, PREIS C, KORN T, EROMS J, WEISS D, SCHULLER C

Chemical Doping of Large-Area Stacked Graphene Films for Use as Transparent, Conducting Electrodes

ACS NANO

KASRY A, KURODA MA, MARTYNA GJ, TULEVSKI GS, BOL AA

Scanning Tunneling Microscopy Simulations of Nitrogen- and Boron-Doped Graphene and Single-Walled Carbon Nanotubes

ACS NANO

ZHENG B, HERMET P, HENRARD L

Thermal conductivity of graphene ribbons from equilibrium molecular dynamics: Effect of ribbon width, edge roughness, and hydrogen termination

APPLIED PHYSICS LETTERS

EVANS WJ, HU L, KEBLINSKI P