国家/地区 India（2）
关键词 DRIFTDIFFUSION（4）
出版物 IEEE TRANSACTIONS O.（3）
出版时间 2018（2）
机构
作者

Explicit Model of Channel Charge, Backscattering, and Mobility for Graphene FET in Quasi-Ballistic Regime

IEEE TRANSACTIONS ON ELECTRON DEVICES

UPADHYAY AK, KUSHWAHA AK, RASTOGI P, CHAUHAN YS, VISHVAKARMA SK

Set Characteristics of Bipolar Graphene Oxide Based Memristor

JOURNAL OF NANOELECTRONICS OPTOELECTRONICS

ARASHLOO BA, AHMADI MT

A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications

IEEE TRANSACTIONS ON ELECTRON DEVICES

AGUIRREMORALES JD, FREGONESE S, MUKHERJEE C, WEI W, HAPPY H, MANEUX C, ZIMMER T

Self-Consistent Modeling of B or N Substitution Doped Bottom Gated Graphene FET With Nonzero Bandgap

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHANDRASEKAR L, PRADHAN KP