国家/地区 Usa（4） Germany（3）
关键词 EPITAXIAL GRAPHENE（8）
出版物
出版时间 2018（3） 2021（2）
机构 NIST（2） PHYS TECH BU.（2）
作者 KRUSKOPF M（8）

Comparison Between Graphene and GaAs Quantized Hall Devices With a Dual Probe

IEEE TRANSACTIONS ON INSTRUMENTATION MEASUREMENT

PAYAGALA SU, RIGOSI AF, PANNA AR, POLLAROLO A, KRUSKOPF M, SCHLAMMINGER S, JARRETT DG, BROWN R, ELMQUIST RE, BROWN D, NEWELL DB

Epitaxial graphene for quantum resistance metrology

METROLOGIA

KRUSKOPF M, ELMQUIST RE

A morphology study on the epitaxial growth of graphene and its buffer layer

THIN SOLID FILMS

KRUSKOPF M, PIERZ K, PAKDEHI DM, WUNDRACK S, STOSCH R, BAKIN A, SCHUMACHER HW

Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation

MICROELECTRONIC ENGINEERING

RIGOSI AF, LIU CI, WU BY, LEE HY, KRUSKOPF M, YANG YF, HILL HM, HU JN, BITTLE EG, OBRZUT J, WALKER ARH, ELMQUIST RE, NEWELL DB

Epitaxial graphene on SiC: modification of structural and electron transport properties by substrate pretreatment

JOURNAL OF PHYSICSCONDENSED MATTER

KRUSKOPF M, PIERZ K, WUNDRACK S, STOSCH R, DZIOMBA T, KALMBACH CC, MULLER A, BARINGHAUS J, TEGENKAMP C, AHLERS FJ, SCHUMACHER HW

Graphene Quantum Hall Effect Devices for AC and DC Electrical Metrology

IEEE TRANSACTIONS ON ELECTRON DEVICES

KRUSKOPF M, BAUER S, PIMSUT Y, CHATTERJEE A, PATEL DK, RIGOSI AF, ELMQUIST RE, PIERZ K, PESEL E, GOTZ M, SCHURR J

Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC

CARBON

RATHORE S, PATEL DK, THAKUR MK, HAIDER G, KALBAC M, KRUSKOPF M, LIU CE, RIGOSI AF, ELMQUIST RE, LIANG CT, HONG PD

Impact of Polymer-Assisted Epitaxial Graphene Growth on Various Types of SiC Substrates

ACS APPLIED ELECTRONIC MATERIALS

CHATTERJEE A, KRUSKOPF M, WUNDRACK S, HINZE P, PIERZ K, STOSCH R, SCHERER H