国家/地区 Germany（7）
关键词 EPITAXIAL GRAPHENE（7）
出版物
出版时间 2019（2）
机构 TECH UNIV CH.（2）
作者 SEYLLER T（7）

Silicon Carbide Stacking-Order-Induced Doping Variation in Epitaxial Graphene

ADVANCED FUNCTIONAL MATERIALS

PAKDEHI DM, SCHADLICH P, NGUYEN TTN, ZAKHAROV AA, WUNDRACK S, NAJAFIDEHAGHANI E, SPECK F, PIERZ K, SEYLLER T, TEGENKAMP C, SCHUMACHER HW

Quasi-Freestanding Graphene on SiC(0001) by Ar-Mediated Intercalation of Antimony: A Route Toward Intercalation of High-Vapor-Pressure Elements

ANNALEN DER PHYSIK

WOLFF S, ROSCHER S, TIMMERMANN F, DANIEL MV, SPECK F, WANKE M, ALBRECHT M, SEYLLER T

Growth of Nanocrystalline MoSe2 Monolayers on Epitaxial Graphene from Amorphous Precursors

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

GOHLER F, HADLAND EC, SCHMIDT C, ZAHN DRT, SPECK F, JOHNSON DC, SEYLLER T

Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WEHRFRITZ P, FROMM F, MALZER S, SEYLLER T

Robust Graphene Membranes in a Silicon Carbide Frame

ACS NANO

WALDMANN D, BUTZ B, BAUER S, ENGLERT JM, JOBST J, ULLMANN K, FROMM F, AMMON M, ENZELBERGEE M, HIRSCH A, MAIER S, SCHMUKI P, SEYLLER T, SPIECKER E, WEBERT HB

Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

WEINGART S, BOCK C, KUNZE U, EMTSEV KV, SEYLLER T, LEY L

Stacking Relations and Substrate Interaction of Graphene on Copper Foil

ADVANCED MATERIALS INTERFACES

SCHADLICH P, SPECK F, BOUHAFS C, MISHRA N, FORTI S, COLETTI C, SEYLLER T