国家/地区 Usa（3）
关键词 EPITAXIAL GROWTH（7）
出版物 APPLIED PHYSICS LET.（6）
出版时间 2010（7）
机构
作者

Layer-by-Layer Transfer of Multiple, Large Area Sheets of Graphene Grown in Multilayer Stacks on a Single SiC Wafer

ACS NANO

UNARUNOTAI S, KOEPKE JC, TSAI CL, DU F, CHIALVO CE, MURATA Y, HAASCH R, PETROV I, MASON N, SHIM M, LYDING J, ROGERS JA

Charge transfer between epitaxial graphene and silicon carbide

APPLIED PHYSICS LETTERS

KOPYLOV S, TZALENCHUK A, KUBATKIN S, FAL KO VI

Few-layer epitaxial graphene grown on vicinal 6H-SiC studied by deep ultraviolet Raman spectroscopy

APPLIED PHYSICS LETTERS

KISODA K, KAMOI S, HASUIKE N, HARIMA H, MORITA K, TANAKA S, HASHIMOTO A

Epitaxial graphene on cubic SiC(111)/Si(111) substrate

APPLIED PHYSICS LETTERS

OUERGHI A, KAHOULI A, LUCOT D, PORTAIL M, TRAVERS L, GIERAK J, PENUELAS J, JEGOU P, SHUKLA A, CHASSAGNE T, ZIELINSKI M

Model of tunneling transistors based on graphene on SiC

APPLIED PHYSICS LETTERS

MICHETTI P, CHELI M, IANNACCONE G

Structured epitaxial graphene growth on SiC by selective graphitization using a patterned AlN cap

APPLIED PHYSICS LETTERS

RUBIOROY M, ZAMAN F, HU YK, BERGER C, MOSELEY MW, MEINDL JD, DE HEER WA

Ultrafast relaxation dynamics of hot optical phonons in graphene

APPLIED PHYSICS LETTERS

WANG HN, STRAIT JH, GEORGE PA, SHIVARAMAN S, SHIELDS VB, CHANDRASHEKHAR M, HWANG J, RANA F, SPENCER MG, RUIZVARGAS CS, PARK J