国家/地区 Korea（3）
关键词 FIELDEFFECT TRANSISTOR（3）
出版物
出版时间
机构
作者 LEE H（3）

High-pressure oxygen annealing of Al2O3 passivation layer for performance enhancement of graphene field-effect transistors

NANOTECHNOLOGY

KIM YJ, KIM SM, HEO S, LEE H, LEE HI, CHANG KE, LEE BH

Highly Air-Stable Phosphorus-Doped n-Type Graphene Field-Effect Transistors

ADVANCED MATERIALS

SOME S, KIM J, LEE K, KULKARNI A, YOON Y, LEE S, KIM T, LEE H

Self-Aligned Multichannel Graphene Nanoribbon Transistor Arrays Fabricated at Wafer Scale

NANO LETTERS

JEONG SJ, JO S, LEE J, YANG K, LEE H, LEE CS, PARK H, PARK S