国家/地区 China（2） Usa（2）
关键词 FIELDEFFECT TRANSISTOR FET（6）
出版物 IEEE ELECTRON DEVIC.（2） PROCEEDINGS OF THE .（2）
出版时间 2013（6）
机构
作者 FARMER DB（2）

Lateral Graphene Heterostructure Field-Effect Transistor

IEEE ELECTRON DEVICE LETTERS

MOON JS, SEO HC, STRATAN F, ANTCLIFFE M, SCHMITZ A, ROSS RS, KISELEV AA, WHEELER VD, NYAKITI LO, GASKILL DK, LEE KM, ASBECK PM

Graphene Electronics: Materials, Devices, and Circuits

PROCEEDINGS OF THE IEEE

WU YQ, FARMER DB, XIA FN, AVOURIS P

Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES

HU GX, HU SY, LIU R, WANG LL, ZHOU X, TANG TA

RF Performance Limits and Operating Physics Arising From the Lack of a Bandgap in Graphene Transistors

IEEE TRANSACTIONS ON NANOTECHNOLOGY

HOLLAND KD, PAYDAVOSI N, NEOPHYTOU N, KIENLE D, VAIDYANATHAN M

Graphene Transistors: Status, Prospects, and Problems

PROCEEDINGS OF THE IEEE

SCHWIERZ F

Stacking Graphene Channels in Parallel for Enhanced Performance With the Same Footprint

IEEE ELECTRON DEVICE LETTERS

FRANKLIN AD, OIDA S, FARMER DB, SMITH JT, HAN SJ, BRESLIN CM, GIGNAC L