国家/地区 | Arabia(2) China(2) |
关键词 | GA2O3(5) |
出版物 | JOURNAL OF ALLOYS C.(2) |
出版时间 | |
机构 | BEIJING UNIV.(2) |
作者 |
AI ML(2)
GUO DY(2)
LI LH(2)
QU YY(2)
TANG WH(2) WU ZP(2) |
Impact of p-Type NiO Pocket and Ultra-Thin Graphene Layer on the RF Performance of beta-Ga2O3 MOSFET
ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY
YADAVA N, MANI S, CHAUHAN RK
JOURNAL OF ALLOYS COMPOUNDS
AI ML, GUO DY, QU YY, CUI W, WU ZP, LI PG, LI LH, TANG WH
JOURNAL OF ALLOYS COMPOUNDS
QU YY, WU ZP, AI ML, GUO DY, AN YH, YANG HJ, LI LH, TANG WH
ACS APPLIED MATERIALS INTERFACES
MIN JH, LI KH, KIM YH, MIN JW, KANG CH, KIM KH, LEE JS, LEE KJ, JEONG SM, LEE DS, BAE SY, NG TK, OOI BS
SURFACES INTERFACES
ELMORSY MA, ELABBASY MT, AWWAD NS, BAJABER MA, ALMOAYID SM, MENAZEA AA