国家/地区 Iran（10） China（2） India（2）
关键词 GNRFET（18）
出版物 ECS JOURNAL OF SOLI.（2） JOURNAL OF COMPUTAT.（2） JOURNAL OF ELECTRON.（2）
SUPERLATTICES MICRO.（2）
出版时间 2017（3） 2019（3） 2020（3） 2021（2）
机构 ISLAMIC AZAD.（3） KERMANSHAH U.（2） UNIV GUILAN（2）
作者 ALIDASH HK（2） ANVARIFARD M.（2） GHODS V（2） GUPTA S（2）
KASHANI SAS（2） KHALESI H（2） NADERI A（2） RADSAR T（2）

Improving the performance of graphene nanoribbon field-effect transistors by using lanthanum aluminate as the gate dielectric

JOURNAL OF COMPUTATIONAL ELECTRONICS

RADSAR T, KHALESI H, GHODS V

All-Graphene Nano-Ribbon FET Based Complete FPGA Design

ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY

KASHANI SAS, ALIDASH HK, FILABADI HS

Single Gate Graphene Nanoribbon-on-Insulator (GNROI) FET as a Novel Strategy to Enhance Electrical Performance-Numerically RF and DC Characteristics Extraction

ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY

ANVARIFARD MK, RAMEZANI Z, AMIRI IS

Approach for MVL design based on armchair graphene nanoribbon field effect transistor and arithmetic circuits design

MICROELECTRONICS JOURNAL

NAYERI M, KESHAVARZIAN P, NAYERI M

Design and Simulation of a Frequency Doubler Using Graphene Nanoribbon Field Effect Transistors for Communication Devices

JOURNAL OF ELECTRONIC MATERIALS

SHARMA P, GUPTA S, KAUR I

The effect of channel uniaxial strain on thermal conductivity of graphene nano-ribbon field effect transistor

MODERN PHYSICS LETTERS B

DOYOM EZ, HAJINASIRI S

Nanoscale Device Modeling and Circuit-Level Performance Projection of Top-Gated Graphene Nanoribbon Field-Effect Transistor for Digital Logic Gates

SCIENCE OF ADVANCED MATERIALS

TAN MLP, CHIN HC, LIM LL, WONG WS, SU ELM, YEONG CF

Numerical study on the performance metrics of lightly doped drain and source graphene nanoribbon field effect transistors with double-material-gate

SUPERLATTICES MICROSTRUCTURES

WANG W, YANG X, LI N, ZHANG L, ZHANG T, YUE GS

Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs

SOLIDSTATE ELECTRONICS

GRASSI R, POLI S, GNANI E, GNUDI A, REGGIANI S, BACCARANI G

Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

NADERI A