国家/地区 France（10）
关键词 GRAPHENE（10）
出版物 IEEE TRANSACTIONS O.（4）
出版时间 2015（4） 2012（2） 2020（2）
机构 UNIV BORDEAU.（8）
作者 ZIMMER T（10）

High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

DENG M, FADIL D, WEI W, PALLECCHI E, HAPPY H, DAMBRINE G, DE MATOS M, ZIMMER T, FREGONESE S

A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology

APPLIED SCIENCESBASEL

FADIL D, PASSI V, WEI W, BEN SALK S, ZHOU D, STRUPINSKI W, LEMME MC, ZIMMER T, PALLECCHI E, HAPPY H, FREGONESE S

Scalable Electrical Compact Modeling for Graphene FET Transistors

IEEE TRANSACTIONS ON NANOTECHNOLOGY

FREGONESE S, MAGALLO M, MANEUX C, HAPPY H, ZIMMER T

Electrical compact modelling of graphene transistors

SOLIDSTATE ELECTRONICS

FREGONESE S, MENG N, NGUYEN HN, MAJEK C, MANEUX C, HAPPY H, ZIMMER T

Characterization and Modeling of Graphene Transistor Low-Frequency Noise

IEEE TRANSACTIONS ON ELECTRON DEVICES

GRANDCHAMP B, FREGONESE S, MAJEK C, HAINAUT C, MANEUX C, MENG N, HAPPY H, ZIMMER T

A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications

IEEE TRANSACTIONS ON ELECTRON DEVICES

AGUIRREMORALES JD, FREGONESE S, MUKHERJEE C, WEI W, HAPPY H, MANEUX C, ZIMMER T

Electrical Compact Modeling of Graphene Base Transistors

ELECTRONICS

FREGONESE S, VENICA S, DRIUSSI F, ZIMMER T

An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

IEEE TRANSACTIONS ON ELECTRON DEVICES

AGUIRREMORALES JD, FREGONESE S, MUKHERJEE C, MANEUX C, ZIMMER T

Graphene Transistor-Based Active Balun Architectures

IEEE TRANSACTIONS ON ELECTRON DEVICES

ZIMMER T, FREGONESE S

Source-Pull and Load-Pull Characterization of Graphene FET

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

FREGONESE S, DE MATOS M, MELE D, MANEUX C, HAPPY H, ZIMMER T