国家/地区 Usa（8）
关键词 GRAPHENE（8）
出版物 IEEE ELECTRON DEVICE LETTERS（8）
出版时间 2011（2） 2012（2） 2013（2）
机构 HRL LABS LLC（6）
作者 GASKILL DK（8）

Lateral Graphene Heterostructure Field-Effect Transistor

IEEE ELECTRON DEVICE LETTERS

MOON JS, SEO HC, STRATAN F, ANTCLIFFE M, SCHMITZ A, ROSS RS, KISELEV AA, WHEELER VD, NYAKITI LO, GASKILL DK, LEE KM, ASBECK PM

Graphene FETs for Zero-Bias Linear Resistive FET Mixers

IEEE ELECTRON DEVICE LETTERS

MOON JS, SEO HC, ANTCLIFFE M, LE D, MCGUIRE C, SCHMITZ A, NYAKITI LO, GASKILL DK, CAMPBELL PM, LEE KM, ASBECK P

Investigation of the Epitaxial Graphene/p-SiC Heterojunction

IEEE ELECTRON DEVICE LETTERS

ANDERSON TJ, HOBART KD, NYAKITI LO, WHEELER VD, MYERSWARD RL, CALDWELL JD, BEZARES FJ, JERNIGAN GG, TADJER MJ, IMHOFF EA, KOEHLER AD, GASKILL DK, EDDY CR, KUB FJ

Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection

IEEE ELECTRON DEVICE LETTERS

MOON JS, SEO HC, ANTCLIFFE M, LIN S, MCGUIRE C, LE D, NYAKITI LO, GASKILL DK, CAMPBELL PM, LEE KM, ASBECK P

Enhanced Performance in Epitaxial Graphene FETs With Optimized Channel Morphology

IEEE ELECTRON DEVICE LETTERS

LIN YM, FARMER DB, JENKINS KA, WU YQ, TEDESCO JL, MYERSWARD RL, EDDY CR, GASKILL DK, DIMITRAKOPOULOS C, AVOURIS P

Low-Phase-Noise Graphene FETs in Ambipolar RF Applications

IEEE ELECTRON DEVICE LETTERS

MOON JS, CURTIS D, ZEHNDER D, KIM S, GASKILL DK, JERNIGAN GG, MYERSWARD RL, EDDY CR, CAMPBELL PM, LEE KM, ASBECK P

Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

IEEE ELECTRON DEVICE LETTERS

MOON JS, CURTIS D, BUI S, HU M, GASKILL DK, TEDESCO JL, ASBECK P, JERNIGAN GG, VANMIL BL, MYERSWARD RL, EDDY CR, CAMPBELL PM, WENG X

Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

IEEE ELECTRON DEVICE LETTERS

MOON JS, CURTIS D, HU M, WONG D, MCGUIRE C, CAMPBELL PM, JERNIGAN G, TEDESCO JL, VANMIL B, MYERSWARD R, EDDY C, GASKILL DK