国家/地区 Russia（6）
关键词 GRAPHENE（6）
出版物 SEMICONDUCTORS（6）
出版时间 2019（6）
机构 RUSSIAN ACAD.（3） IOFFE INST（2）
作者 FATEEV DV（2） POPOV VV（2）

Edge Doping in Graphene Devices on SiO2 Substrates

SEMICONDUCTORS

VASILYEVA GY, SMIRNOV D, VASILYEV YB, GRESHNOV AA, HAUG RJ

Current-Voltage Characteristics of Composite Graphene-Nanotube Films with Irregular Nanotube Arrangement

SEMICONDUCTORS

GLUKHOVA OE, SLEPCHENKOV MM, MITROFANOV VV, BARKOV PV

Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC

SEMICONDUCTORS

ELISEYEV IA, DAVYDOV VY, SMIRNOV AN, NESTOKLON MO, DEMENTEV PA, LEBEDEV SP, LEBEDEV AA, ZUBOV AV, MATHEW S, PEZOLDT J, BOKAI KA, USACHOV DY

Lateral Energy Transfer by Plasmons Excited by a Terahertz Wave in a Periodic Spatially Asymmetric Graphene Structure

SEMICONDUCTORS

FATEEV DV, MASHINSKY KV, MOISEENKO IM, POPOV VV

On the Amplification of Terahertz Radiation by High-Q Resonant Plasmons in a Periodic Graphene Bilayer under Plasmon-Mode Anticrossing

SEMICONDUCTORS

POLISCHUK OV, FATEEV DV, POPOV VV

Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures

SEMICONDUCTORS

KHANIN YN, VDOVIN EE, MISHCHENKO A, NOVOSELOV KS