国家/地区 Usa（5） Taiwan（3） China（2）
关键词 HIGH MOBILITY（13）
出版物 ACS APPLIED MATERIA.（2） NANO LETTERS（2） VACUUM（2）
出版时间 2017（3） 2015（2）
机构 CHANG GUNG U.（2）
作者 CHIU IS（2） LAI CS（2） LIU B（2）

SiOC-Accelerated Graphene Grown on SiO2/Si with Tunable Electronic Properties

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

GARMAN PD, YANG H, YEN YC, YU JF, KWAK KJ, MALKOC V, TALESARA VV, LEE LJ, LU W

Graphene Material and Perspectives for Nanoelectronics

JOURNAL OF NANOELECTRONICS OPTOELECTRONICS

BENFDILA A, LAKHLEF A

Exceptional Charge Transport Properties of Graphene on Germanium

ACS NANO

CAVALLO F, DELGADO RR, KELLY MM, PEREZ JRS, SCHROEDER DP, XING HG, ERIKSSON MA, LAGALLY MG

How Close Can One Approach the Dirac Point in Graphene Experimentally?

NANO LETTERS

MAYOROV AS, ELIAS DC, MUKHIN IS, MOROZOV SV, PONOMARENKO LA, NOVOSELOV KS, GEIM AK, GORBACHEV RV

Fabrication of suspended graphene devices and their electronic properties

CHINESE PHYSICS B

LI QA, CHENG ZG, LI ZJ, WANG ZH, FANG Y

Epitaxial graphene transistors on SIC substrates

IEEE TRANSACTIONS ON ELECTRON DEVICES

KEDZIERSKI J, HSU PL, HEALEY P, WYATT PW, KEAST CL, SPRINKLE M, BERGER C, DE HEER WA

Spontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures

2D MATERIALS

MANIA E, ALENCAR AB, CADORE AR, CARVALHO BR, WATANABE K, TANIGUCHI T, NEVES BRA, CHACHAM H, CAMPOS LC

Reprint of: Improvements on thermal stability of graphene and top gate graphene transistors by Ar annealing

VACUUM

LIU B, CHIU IS, LAI CS

Improvements on thermal stability of graphene and top gate graphene transistors by Ar annealing

VACUUM

LIU B, CHIU IS, LAI CS

High Mobility of Graphene-Based Flexible Transparent Field Effect Transistors Doped with TiO2 and Nitrogen-Doped TiO2

ACS APPLIED MATERIALS INTERFACES

WU YH, TSENG PY, HSIEH PY, CHOU HT, TAI NH