国家/地区 Germany（2） Japan（2） Usa（2）
关键词 MOLECULAR BEAM EPITAXY（8）
出版物 JOURNAL OF CRYSTAL GROWTH（8）
出版时间 2013（2） 2015（2）
机构
作者

Influence of nitridation on III-nitride films grown on graphene/quartz substrates by plasma-assisted molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH

YU JD, HAO ZB, DENG J, YU WY, WANG L, LUO Y, WANG J, SUN CZ, HAN YJ, XIONG B, LI HT

Selective growth of (001) GaAs using a patterned graphene mask

JOURNAL OF CRYSTAL GROWTH

HIROTA Y, SHIRAI Y, IHA H, KITO Y, SUZUKI M, KATO H, YAMAMOTO N, MARUYAMA T, NARITSUKA S

Graphene films grown at low substrate temperature and the growth model by using MBE technique

JOURNAL OF CRYSTAL GROWTH

LIN MY, GUO WC, WU MH, WANG PY, LEE SC, LIN SY

Molecular beam epitaxial growth of graphene using cracked ethylene

JOURNAL OF CRYSTAL GROWTH

MAEDA F, HIBINO H

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

JOURNAL OF CRYSTAL GROWTH

AHMED AS, WEN H, OHTA T, PINCHUK IV, ZHU TC, BEECHEM T, KAWAKAMI RK

Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer

JOURNAL OF CRYSTAL GROWTH

ALASKAR Y, ARAFIN S, LIN QY, WICKRAMARATNE D, MCKAY J, NORMAN AG, ZHANG Z, YAO LC, DING F, ZOU J, GOORSKY MS, LAKE RK, ZURBUCHEN MA, WANG KL

The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH

SCHUMANN T, LOPES JMJ, WOFFORD JM, OLIVEIRA MH, DUBSLAFF M, HANKE M, JAHN U, GEELHAAR L, RIECHERT H

Remote epitaxy of In(x)Ga1-As-x (001) on graphene covered GaAs (001) substrates

JOURNAL OF CRYSTAL GROWTH

HENKSMEIER T, SCHULZ JF, KLUTH E, FENEBERG M, GOLDHAHN R, SANCHEZ AM, VOIGT M, GRUNDMEIER G, REUTER D