国家/地区 India（3）
关键词 MOSFET（3）
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出版时间
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Impact of p-Type NiO Pocket and Ultra-Thin Graphene Layer on the RF Performance of beta-Ga2O3 MOSFET

ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY

YADAVA N, MANI S, CHAUHAN RK

Empirical Drain Current Model of Graphene Field-Effect Transistor for Application as a Circuit Simulation Tool

IETE JOURNAL OF RESEARCH

BARDHAN S, SAHOO M, RAHAMAN H

Study the impact of graphene channel over conventional silicon on DC/analog and RF performance of DG dual-material-gate VTFET

MICROELECTRONICS JOURNAL

ZOHMINGLIANA, CHOUDHURI B, BHOWMICK B