国家/地区 Usa（4）
关键词 MOSFET（4）
出版物
出版时间
机构 PURDUE UNIV（2） UNIV ILLINOI.（2）
作者

MoS2 Field-Effect Transistors With Graphene/Metal Heterocontacts

IEEE ELECTRON DEVICE LETTERS

DU YC, YANG LM, ZHANG JY, LIU H, MAJUMDAR K, KIRSCH PD, YE PDD

Temperature and strain-rate dependent fracture strength of graphene

JOURNAL OF APPLIED PHYSICS

ZHAO H, ALURU NR

Performance projections for ballistic graphene nanoribbon field-effect transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

LIANG GC, NEOPHYTOU N, NIKONOV DE, LUNDSTROM MS

On Device Modeling for Circuit Simulation With Application to Carbon-Nanotube and Graphene Nano-Ribbon Field-Effect Transistors

IEEE TRANSACTIONS ON COMPUTERAIDED DESIGN OF INTEGRATED CIRCUITS SYSTEMS

HAJJ IN