国家/地区 | Usa(3) Russia(2) |
关键词 | RESISTIVE MEMORY(9) |
出版物 | MICROELECTRONIC ENG.(2) |
出版时间 | 2016(3) 2019(2) |
机构 | RZHANOV INST.(2) |
作者 | ANTONOVA IV(2) IVANOV AI(2) KOTIN IA(2) |
ADVANCED ELECTRONIC MATERIALS
IVANOV AI, GUTAKOVSKII AK, KOTIN IA, SOOTS RA, ANTONOVA IV
NANOTECHNOLOGY
IVANOV AI, NEBOGATIKOVA NA, KOTIN IA, SMAGULOVA SA, ANTONOVA IV
SENSORS MATERIALS
LIU CY, ZHANG YX, YANG CP, LAI CH, WENG MH, YE CS, HUANG CK
MICROELECTRONIC ENGINEERING
HU YS, PERELLO D, YUN M, KWON DH, KIM M
NANO LETTERS
PARK WI, YOON JM, PARK M, LEE J, KIM SK, JEONG JW, KIM K, JEONG HY, JEON S, NO KS, LEE JY, JUNG YS
MICROELECTRONIC ENGINEERING
MANNEQUIN C, DELAMOREANU A, LATUROMAIN L, JOUSSEAUME V, GRAMPEIX H, DAVID S, RABOT C, ZENASNI A, VALLEE C, GONON P
NANOSCALE RESEARCH LETTERS
KANG YH, RUAN H, CLAUS RO, HEREMANS J, ORLOWSKI M
PROGRESS IN CHEMISTRY
SUN S, ZHUANG XD, WANG LX, WANG C, ZHANG B, CHEN Y
Oxygen migration induced effective magnetic and resistive switching boosted by graphene quantum dots
JOURNAL OF ALLOYS COMPOUNDS
REN SX, LI ZH, LIU XM, LI YS, CAO GZ, ZHAO JJ