国家/地区 India（2） Russia（2） Vietnam（2）
关键词 RESISTIVE SWITCHING（9）
出版物 JOURNAL OF ALLOYS C.（2）
出版时间 2020（9）
机构
作者 DO DP（2） PHAM KN（2） PHAN BT（2） TRAN KM（2）

Large-scalable graphene oxide films with resistive switching for non-volatile memory applications

JOURNAL OF ALLOYS COMPOUNDS

BRZHEZINSKAYA M, KAPITANOVA OO, KONONENKO OV, KOVESHNIKOV S, KOREPANOV V, ROSHCHUPKIN D

Experimental combined theoretical study on chemical interactions of graphene oxide with chitosan and its resistive-switching effect

MATERIALS SCIENCE ENGINEERING BADVANCED FUNCTIONAL SOLIDSTATE MATERIALS

TRAN KM, DO DP, VU HN, NGUYEN TT, PHAN BT, THI KHT, PHAM KN

Resistive Switching Observation in a Gallium-Based Liquid Metal/Graphene Junction

ACS APPLIED ELECTRONIC MATERIALS

GUTIERREZ D, DE SOUSA JA, MASTORRENT M, CRIVILLERS N

Non-volatile resistive switching memory device based on ZnO-graphene oxide embedded in a polymer matrix fabricated on a flexible PET substrate

MICROELECTRONIC ENGINEERING

HMAR JJL

Flexible Resistive Switching Memory Devices Based on Graphene Oxide Polymer Nanocomposite

NANO

ZHAO EM, LIU SQ, LIU XD, WANG C, LIU GY, XING CX

Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices

INDIAN JOURNAL OF PHYSICS

LIN YJ, WU CL, KE ZY, CHANG HC

Low operating voltage resistive random access memory based on graphene oxide-polyvinyl alcohol nanocomposite thin films

JOURNAL OF SCIENCEADVANCED MATERIALS DEVICES

NGO HT, NGUYEN MTT, DO DP, TRAN KM, TA KHT, PHAN BT, PHAM KN

Flexibility of Fluorinated Graphene-Based Materials

MATERIALS

ANTONOVA I, NEBOGATIKOVA N, ZERROUKI N, KURKINA I, IVANOV A

Structural and resistive switching behaviour in lanthanum strontium manganite - Reduced graphene oxide nanocomposite system

JOURNAL OF ALLOYS COMPOUNDS

KUMARI K, KUMAR A, KOTNEES DK, BALAKRISHNAN J, THAKUR AD, RAY SJ