国家/地区 China（6）
关键词 SIC SUBSTRATE（8）
出版物 CHINESE PHYSICS B（3）
出版时间 2013（2） 2014（2）
机构
作者 WANG DC（2） ZHANG YM（2）

Synthesis of graphene-like carbon film on SiC substrate

JOURNAL OF CRYSTAL GROWTH

WANG Y, GU PF, ZHAO ZF, ZHOU P, LI ZH, LI Y

Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0001) substrate

APPLIED SURFACE SCIENCE

LIU QB, YU C, HE ZZ, GU GD, WANG JJ, ZHOU CJ, GUO JC, GAO XD, FENG ZH

Effect of C-face 4H-SiC(0001) deposition on thermopower of single and multilayer graphene in AA, AB and ABC stacking

2D MATERIALS

WIERZBOWSKA M, DOMINIAK A, PIZZI G

Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substratesl

CHINESE PHYSICS B

WANG DC, ZHANG YM

A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates

CHINESE PHYSICS B

CHEN LL, GUO LW, LIU Y, LI ZL, HUANG J, LU W

Symmetry breaking in graphene layers on SiC-substrate-an ab-initio study

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

AGRAWAL BK, AGRAWAL S

Raman analysis of epitaxial graphene grown on 4H-SiC (0001) substrate under low pressure condition

CHINESE PHYSICS B

WANG DC, ZHANG YM, ZHANG YM, LEI TM, GUO H, WANG YH, TANG XY, WANG H

Regulating the Electronic Structure of Freestanding Graphene on SiC by Ge/Sn Intercalation: A Theoretical Study

MOLECULES

LUO XY, LIANG GJ, LI YL, YU FP, ZHAO X