国家/地区
关键词 SILICON CARBIDE（4）
出版物
出版时间 2009（4）
机构
作者

Structural and Electronic Properties of PTCDA Thin Films on Epitaxial Graphene

ACS NANO

HUANG H, CHEN S, GAO XY, CHEN W, WEE ATS

Growth of graphene structure on 6H-SiC(000(1)over-bar) : Molecular dynamics study

ACTA PHYSICA SINICA

TANG C, JI L, MENG LJ, SUN LZ, ZHANG KW, ZHONG JX

Substrate orientation: A way towards higher quality monolayer graphene growth on 6H-SiC(0001)

SURFACE SCIENCE

VIROJANADARA C, YAKIMOVA R, OSIECKI JR, SYVAJARVI M, UHRBERG RIG, JOHANSSON LI, ZAKHAROV AA

Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)

JOURNAL OF ELECTRONIC MATERIALS

LUXMI, NIE S, FISHER PJ, FEENSTRA RM, GU G, SUN YG