国家/地区 India（4） Usa（3） Korea（2）
关键词 SUBTHRESHOLD SWING（11）
出版物 IEEE ELECTRON DEVIC.（2）
出版时间 2021（2）
机构 UNIV NOTRE D.（2）
作者 PANDIAN MK（2） SAMUEL TSA（2） VIMALA P（2） ZHANG Q（2）

InAs/Si Hetero-Junction Channel to Enhance the Performance of DG-TFET with Graphene Nanoribbon: an Analytical Model

SILICON

DUTTA R, SUBASH TD, PAITYA N

A 10 nm Asymmetric Graphene-Rhenium Disulfide Field-Effect Transistor for High-Speed Application

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

CHAWLA R, SINGHAL P, GARG AK

A Graphene-Based Filament Transistor with Sub-10 mVdec(-1) Subthreshold Swing

ADVANCED ELECTRONIC MATERIALS

TIAN H, WANG XF, ZHAO HM, MI WT, YANG Y, CHIU PW, REN TL

Performance Analysis of Graphene Nanoribbon Field Effect Transistors in the Presence of Surface Roughness

IEEE TRANSACTIONS ON ELECTRON DEVICES

SANAEEPUR M, GOHARRIZI AY, SHARIFI MJ

Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons

IEEE ELECTRON DEVICE LETTERS

ZHANG Q, LU YQ, XING HG, KOESTER SJ, KOSWATTA SO

Graphene Nanoribbon Tunnel Transistors

IEEE ELECTRON DEVICE LETTERS

ZHANG Q, FANG T, XING HL, SEABAUGH A, JENA D

Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics

2D MATERIALS

JEONG SJ, KIM HW, HEO J, LEE MH, SONG HJ, KU J, LEE Y, CHO Y, JEON W, SUH H, HWANG S, PARK S

Scaling Effects on Static Metrics and Switching Attributes of Graphene Nanoribbon FET for Emerging Technology

IEEE TRANSACTIONS ON EMERGING TOPICS IN COMPUTING

BANADAKI YM, SRIVASTAVA A

ZnO/graphene ambipolar transistor with low sub-threshold swing

MATERIALS RESEARCH EXPRESS

KIM BH, HONG SH, KANG JW

Simulation insights of a new dual gate graphene nano-ribbon tunnel field-effect transistors for THz applications

DIAMOND RELATED MATERIALS

NAYANA GH, VIMALA P, PANDIAN MK, SAMUEL TSA