国家/地区 China（7）
关键词 TIGHTBINDING CALCULATION（7）
出版物 PHYSICAL REVIEW B（4）
出版时间 2009（5）
机构
作者

Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors

APPLIED PHYSICS LETTERS

KANG JH, HE Y, ZHANG JY, YU XX, GUAN XM, YU ZP

Polarization-induced switching effect in graphene nanoribbon edge-defect junction

JOURNAL OF CHEMICAL PHYSICS

YIN G, LIANG YY, JIANG F, CHEN H, WANG P, NOTE R, MIZUSEKI H, KAWAZOE Y

Band-gap scaling of graphene nanohole superlattices

PHYSICAL REVIEW B

LIU W, WANG ZF, SHI QW, YANG JL, LIU F

Nernst and Seebeck effects in a graphene nanoribbon

PHYSICAL REVIEW B

XING YX, SUN QF, WANG J

Moumlbius graphene strip as a topological insulator

PHYSICAL REVIEW B

GUO ZL, GONG ZR, DONG H, SUN CP

Quantum blockade and loop current induced by a single lattice defect in graphene nanoribbons

PHYSICAL REVIEW B

YAN JY, ZHANG P, SUN B, LU HZ, WANG ZG, DUAN SQ, ZHAO XG

Optical properties for armchair-edge graphene nanoribbons

JOURNAL OF APPLIED PHYSICS

LIAO WH, ZHOU GH, XI F