国家/地区 Usa（3）
关键词 TRANSISTOR（9）
出版物 ACS APPLIED MATERIA.（2）
出版时间 2020（9）
机构
作者 HAPPY H（2） PALLECCHI E（2） WEI W（2）

Experimental Observation and Modeling of the Impact of Traps on Static and Analog/HF Performance of Graphene Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

PACHECOSANCHEZ A, MAVREDAKIS N, FEIJOO PC, WEI W, PALLECCHI E, HAPPY H, JIMENEZ D

Molecular alignment on graphene surface determines transport properties of graphene/organic semiconductor transistors

ORGANIC ELECTRONICS

TKACHUK V, PAVLICA E, BRATINA G

Hydrogen Plasma Exposure of Monolayer MoS2 Field-Effect Transistors and Prevention of Desulfurization by Monolayer Graphene

ACS APPLIED MATERIALS INTERFACES

SOMAN A, BURKE RA, LI Q, VALENTIN MD, LI TT, MAO D, DUBEY M, GU TY

Performance Degradation in Graphene-ZnO Barristors Due to Graphene Edge Contact

ACS APPLIED MATERIALS INTERFACES

KIM SY, RYOU J, KIM MJ, KIM K, LEE Y, KIM SM, HWANG HJ, KIM YH, LEE BH

High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

DENG M, FADIL D, WEI W, PALLECCHI E, HAPPY H, DAMBRINE G, DE MATOS M, ZIMMER T, FREGONESE S

Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors

MOLECULES

JEWEL MU, MONNE MA, MISHRA B, CHEN MY

High On-Off Ratio Graphene Switch via Electrical Double Layer Gating

IEEE ACCESS

HAYASHI CK, GARMIRE DG, YAMAUCHI TJ, TORRES CM, ORDONEZ RC

The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

ASAD M, BONMANN M, YANG XX, VOROBIEV A, JEPPSON K, BANSZERUS L, OTTO M, STAMPFER C, NEUMAIER D, STAKE J

Design Rules for Memories Based on Graphene Ferroelectric Field Effect Transistors

ACS APPLIED ELECTRONIC MATERIALS

HASSANPOUR M, HEIDLER J, MULLEN K, ASADI K