国家/地区 India（6）
关键词 TUNNEL FET（8）
出版物 SILICON（2）
出版时间 2021（3）
机构
作者 DUTTA R（3） PAITYA N（3） SUBASH TD（3）

InAs/Si Hetero-Junction Channel to Enhance the Performance of DG-TFET with Graphene Nanoribbon: an Analytical Model

SILICON

DUTTA R, SUBASH TD, PAITYA N

Electric Field and Surface Potential Analytical Modeling of Novel Double Gate Triple Material PiN Tunneling Graphene Nano Ribbon FET (DG-TM-PiN-TGNFET)

SILICON

DUTTA R, PAITYA N, SUBASH TD

Barrier engineering for double layer CVD graphene tunnel FETs

MICROELECTRONIC ENGINEERING

ROY T, HESABI ZR, JOINER CA, FUJIMOTO A, VOGEL EM

Performance Evaluation of Bilayer Graphene Nanoribbon Tunnel FETs for Digital and Analog Applications

IEEE TRANSACTIONS ON NANOTECHNOLOGY

RAWAT B, PAILY R

Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model

SOLIDSTATE ELECTRONICS

AVNON A, GOLMAN R, GARZON E, NGO HD, LANUZZA M, TEMAN A

Sensitivity and Stability Analysis of Double-Gate Graphene Nanoribbon Vertical Tunnel FET for Different Gas Sensing

ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY

LIANA Z, CHOUDHURI B, BHOWMICK B

Investigation of ON Current and Subthreshold Swing of an InSb/Si Heterojunction Stacked Oxide Double-Gate TFET with Graphene Nanoribbon

JOURNAL OF ELECTRONIC MATERIALS

SAMUEL TSA, VENKATESH M, PANDIAN MK, VIMALA P

DC performance analysis of III-V/Si heterostructure double gate triple material PiN tunneling graphene nanoribbon FET circuits with quantum mechanical effects

JOURNAL OF COMPUTATIONAL ELECTRONICS

DUTTA R, SUBASH TD, PAITYA N