国家/地区 Brazil（8）
关键词
出版物 PHYSICAL REVIEW B（3）
出版时间 2007（2） 2008（2） 2010（2）
机构 UNIV FED MINAS GERAIS（8）
作者 ALVES ES（8）

Rapid fabrication of bilayer graphene devices using direct laser writing photolithography

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

LEON JA, ALVES ES, ELIAS DC, BRANT JC, BARBOSA TC, MALARD LM, PIMENTA MA, RIBEIRO GM, PLENTZ F

Thermal enhancement of chemical doping in graphene: a Raman spectroscopy study

JOURNAL OF PHYSICSCONDENSED MATTER

MALARD LM, MOREIRA RL, ELIAS DC, PLENTZ F, ALVES ES, PIMENTA MA

Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate

APPLIED PHYSICS LETTERS

BRANT JC, LEON J, BARBOSA TC, ARAUJO END, ARCHANJO BS, PLENTZ F, ALVES ES

Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene

PHYSICAL REVIEW LETTERS

MALARD LM, ELIAS DC, ALVES ES, PIMENTA MA

Electronic properties of bilayer graphene probed by Resonance Raman Scattering

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

MALARD LM, NILSSON J, MAFRA DL, ELIAS DC, BRANT JC, PLENTZ F, ALVES ES, CASTRO NETO AH, PIMENTA MA

Determination of LA and TO phonon dispersion relations of graphene near the Dirac point by double resonance Raman scattering

PHYSICAL REVIEW B

MAFRA DL, SAMSONIDZE G, MALARD LM, ELIAS DC, BRANT JC, PLENTZ F, ALVES ES, PIMENTA MA

Probing the electronic structure of bilayer graphene by Raman scattering

PHYSICAL REVIEW B

MALARD LM, NILSSON J, ELIAS DC, BRANT JC, PLENTZ F, ALVES ES, CASTRO AH, PIMENTA MA

Patterning graphene with a helium ion microscope: Observation of metal-insulator transition induced by disorder

PHYSICAL REVIEW B

ARAUJO END, BRANT JC, ARCHANJO BS, MEDEIROSRIBEIRO G, PLENTZ F, ALVES ES