国家/地区 China（6）
关键词 GRAPHENE（2）
出版物 APPLIED PHYSICS LET.（2）
出版时间 2013（2） 2017（2）
机构 HEBEI SEMICO.（5）
作者 DUN SB（6）

Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001)

SOLID STATE COMMUNICATIONS

YU C, LI J, GAO KH, LIN T, LIU QB, DUN SB, HE ZZ, CAI SJ, FENG ZH

Buffer layer induced band gap and surface low energy optical phonon scattering in epitaxial graphene on SiC(0001)

APPLIED PHYSICS LETTERS

YU C, LI J, LIU QB, DUN SB, HE ZZ, ZHANG XW, CAI SJ, FENG ZH

Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0 degrees and 8 degrees Si-terminated 4H-SiC substrates

CHINESE PHYSICS B

LI J, WANG L, FENG ZH, YU C, LIU QB, DUN SB, CAI SJ

Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates

CHINESE PHYSICS LETTERS

PAN HL, JIN Z, MA P, GUO JN, LIU XY, YE TC, LI J, DUN SB, FENG ZH

Improvement of the Frequency Characteristics of Graphene Field-Effect Transistors on SiC Substrate

IEEE ELECTRON DEVICE LETTERS

YU C, HE ZZ, SONG XB, LIU QB, HAN TT, DUN SB, WANG JJ, ZHOU CJ, GUO JC, LV YJ, FENG ZH, CAI SJ

High-frequency noise characterization of graphene field effect transistors on SiC substrates

APPLIED PHYSICS LETTERS

YU C, HE ZZ, SONG XB, LIU QB, DUN SB, HAN TT, WANG JJ, ZHOU CJ, GUO JC, LV YJ, CAI SJ, FENG ZH