国家/地区 China（14）
关键词 GRAPHENE（6） SYNCHROTRON RADIATI.（4） 6HSIC（3）
SI SUBSTRATE（2）
出版物 ACTA PHYSICA SINICA（2） ACTA PHYSICOCHIMICA.（2） CHINESE PHYSICS LET.（2）
出版时间 2011（5） 2012（5）
机构 UNIV SCI TE.（12）
作者 KANG CY（14）

Tunable bulk polaritons of graphene-based hyperbolic metamaterials

OPTICS EXPRESS

ZHANG LW, ZHANG ZR, KANG CY, CHENG B, CHEN L, YANG XF, WANG J, LI WB, WANG BJ

Carbon flux assisted graphene layer growth on 6H-SiC(000-1) by thermal decomposition

JOURNAL OF APPLIED PHYSICS

LIU ZL, KANG CY, FAN LL, XU PS, ZOU CW

Few-layer graphene growth on 6H-SiC(0001) surface at low temperature via Ni-silicidation reactions

APPLIED PHYSICS LETTERS

KANG CY, FAN LL, CHEN S, LIU ZL, XU PS, ZOU CW

Effect of substrate temperature on few-layer graphene grown on Al2O3 (0001) via direct carbon atoms deposition

SOLID STATE COMMUNICATIONS

LIU ZL, TANG J, KANG CY, ZOU CW, YAN WS, XU PS

Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

CHINESE PHYSICS B

TANG J, KANG CY, LI LM, LIU ZL, YAN WS, WEI SQ, XU PS

Growth and characterization of graphene on SiO2/Si substrate

ACTA PHYSICA SINICA

KANG CY, TANG J, LI LM, YAN WS, XU PS, WEI SQ

In situ study on the electronic structure of graphene grown on 6H-SiC (0 0 0 (1)over-bar) with synchrotron radiation photoelectron spectroscopy

APPLIED SURFACE SCIENCE

KANG CY, TANG J, LI LM, PAN HB, XU PS, WEI SQ, CHEN XF, XU XG

Direct Graphene Growth by Depositing Carbon Atoms on Si Substrate Covered by SiC Buffer Layers

ACTA PHYSICOCHIMICA SINICA

TANG J, KANG CY, LI LM, XU PS

Growth of Few-Layer Graphene on Sapphire Substrates by Directly Depositing Carbon Atoms

CHINESE PHYSICS LETTERS

KANG CY, TANG J, LIU ZL, LI LM, YAN WS, WEI SQ, XU PS

Graphene films grown on Si substrate via direct deposition of solid-state carbon atoms

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

TANG J, KANG CY, LI LM, YAN WS, WEI SQ, XU PS