国家/地区 China（27）
关键词 BAND GAP（27）
出版物 SURFACE SCIENCE（2）
出版时间 2015（6） 2012（4） 2018（3） 2019（3） 2021（3） 2013（2） 2020（2）
机构 CHINESE ACAD.（5） SOOCHOW UNIV（2）
作者 LI Y（2） MA F（2） ZHANG HM（2）

Nitrogen-doped graphene quantum dots prepared by electrolysis of nitrogen-doped nanomesh graphene for the fluorometric determination of ferric ions

MICROCHIMICA ACTA

YANG F, BAO WJ, LIU TX, ZHANG B, HUANG S, YANG W, LI Y, LI N, WANG CX, PAN CW, LI YF

Sizable Band Gap in Epitaxial Bilayer Graphene Induced by Silicene Intercalation

NANO LETTERS

GUO H, ZHANG RZ, LI H, WANG XY, LU HL, QIAN K, LI G, HUANG L, LIN X, ZHANG YY, DING H, DU SX, PANTELIDES ST, GAO HJ

Carbon content and layers number controlling electronic properties of hybridized graphene and boron nitride

CERAMICS INTERNATIONAL

LIU K, CHEN L, ZHANG GG, WU GZ, MA F, LU ZB

Different elements doped graphene sensor for CO2 greenhouse gases detection: The DFT study

CHEMICAL PHYSICS LETTERS

ZHENG ZQ, WANG HL

On-Surface Synthesis of 8-and 10-Armchair Graphene Nanoribbons

SMALL

SUN KW, JI PH, ZHANG JJ, WANG JX, LI XC, XU X, ZHANG HM, CHI LF

Band structures of blue luminescent nitrogen-doped graphene quantum dots by synchrotron-based XPS

SURFACE SCIENCE

HE SJ, TURNBULL MJ, NIE YT, SUN XH, DING ZF

Doping and band gap control at poly(vinylidene fluoride)/graphene interface

JOURNAL OF PHYSICS DAPPLIED PHYSICS

CAI J, WANG JL, GAO H, TIAN BB, GONG SJ, DUAN CG, CHU JH

Electronic transport in Thue-Morse gapped graphene superlattice under applied bias

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

WANG MJ, ZHANG HM, LIU D

Opening Band Gap of Graphene by Chemical Doping: a First Principles Study

CHINESE JOURNAL OF STRUCTURAL CHEMISTRY

GUANG XM, ZHANG HY, ZHANG M, LUO YH

Molecular rectification in triangularly shaped graphene nanoribbons

JOURNAL OF COMPUTATIONAL CHEMISTRY

LIU HM, WANG HB, ZHAO JW, KIGUCHI M