国家/地区 China（6）
关键词 RAMAN（2）
出版物 JOURNAL OF MATERIAL.（2）
出版时间 2016（3） 2019（2）
机构 XIDIAN UNIV（6）
作者 CHONG LY（6）

An ultraviolet photoelectron spectroscopy study on bandgap broadening of epitaxial graphene on SiC with surface doping

CARBON

HU YF, LIU JL, DOU WT, MAO KL, GUO LX, CHONG LY, HU JC, YUAN H, HE YJ, GUO H, ZHANG YM

Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC

NANOMATERIALS

CHONG LY, GUO H, ZHANG YM, HU YF, ZHANG YM

Fabrication of graphene-like carbon films on 6H-SiC substrates via chlorination-annealing at low temperature

AIP ADVANCES

HU YF, GUO LX, DOU WT, CHONG LY, GUO H, ZHANG YM

Effects of substrate on the domains and electrical properties of epitaxial graphene formed on on-axis C-face 4H-SiC

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

HU YF, ZHANG YM, GUO H, CHONG LY, ZHANG CX, ZHANG YM

Growth of thickness-controlled epitaxial graphene on on-axis 6H-SiC (C-face) substrate in graphite enclosure

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

HU YF, ZHANG YM, GUO H, CHONG LY, ZHANG CX, ZHANG YM

Preparation of few-layer graphene on on-axis 4H-SiC (000(1)over-bar) substrates using a modified SiC-stacked method

MATERIALS LETTERS

HU YF, ZHANG YM, GUO H, CHONG LY, ZHANG YM